data sheet 1 of 11 rev. 03.1, 2015-06-18 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! ptva127002ev thermally-enhanced high power rf ldmos fet 700 w, 50 v, 1200 C 1400 mhz description the ptva127002ev ldmos fet is designed for use in power amplifer applications in the 1200 to 1400 mhz frequency band. features include high gain and thermally-enhanced package with bolt-down fange. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptva127002ev package h-36275-4 features ? broadband input and output matching ? high gain and effciency ? integrated esd protection ? low thermal resistance ? excellent ruggedness ? pb-free and rohs compliant ? capable of withstanding a 10:1 load mismatch (all phase angles) at 700 w peak under rf pulse, 300 s, 10 % duty cycle. rf characteristics pulsed rf performance (tested in infneon test fxture) v dd = 50 v, i dq = 150 ma per side, p out = 700 w, ? 1 = 1200 mhz, ? 2 = 1300 mhz, ? 3 = 1400 mhz, 300 s pulse width, 12% duty cycle characteristic symbol min typ max unit gain g ps 15.5 16 db drain efficiency h d 50 56 % gain flatness dg 1.0 1.3 db return loss irl C20 C11 db 15 25 35 45 55 65 15 25 35 45 55 65 30 32 34 36 38 40 42 44 46 48 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 300 ma, t case = 25 c, 300 s pulse width, 12% duty cycle 1200 mhz 1300 mhz 1400 mhz a127002ev_g1 - 1 output power efficiency
ptva127002ev data sheet 2 of 11 rev. 03.1, 2015-06-18 dc characteristics (single side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 105 v drain leakage current v ds = 50 v, v gs = 0 v i dss 1.0 a v ds = 105 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.1 w operating gate voltage v ds = 50 v, i dq = 150 ma v gs 3 3.35 4 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 105 v gate-source voltage v gs C6 to +12 v junction temperature t j 200 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 700 w cw) r qjc ~0.36 c/w rf characteristics typical rf performance (not subject to production test, verifed by design/characterization in infneon test fxture) v dd = 50 v, i dq = 150 ma per side, input signal (t r = 7 ns, t f = 5 ns), 300 s pulse width, 12% duty cycle, class ab test mode of operation ? (mhz) irl (db) p 1db p 3db max p droop (pulse) @ p 1db t r (ns) @p 1db t f (ns) @p 1db gain (db) eff (%) p out (w) gain (db) eff (%) p out (w) 300 s, 12% duty cycle 1200 C20 16.6 57 710 14.6 57 810 0.2 5 <2 1300 C16 15.8 54 840 13.8 55 950 0.3 5 <2 1400 C20 15.7 54 730 13.7 53 820 0.2 5 <2 typical rf performance (tested on ltn/ptva127002ev e5 infneon test fxture) v dd = 50 v, i dq = 150 ma per side, input signal (t r = 7 ns, t f = 5 ns), 32 ms pulse width, 50% duty cycle, class ab test mode of operation compression ? (mhz) p in (dbm) gain (db) irl (db) i (a) eff (%) p out (dbm) p out (w) 32 ms, 50% duty cycle p 1db 1300 42.0 16.1 22.6 22.7 56.6 58.1 641 p 3db 1300 44.4 14.1 19.0 25.2 55.8 58.5 703
data sheet 3 of 11 rev. 03.1, 2015-06-18 ptva127002ev ordering information type and version order code package description shipping ptva127002ev v1 ptva127002evv1xwsa1 h-36275-4, bolt-down tray ptva127002ev v1 r250 ptva127002evv1r250xtma1 h-36275-4, bolt-down tape & reel, 250 pcs see next page for typical rf performance
ptva127002ev data sheet 4 of 11 rev. 03.1, 2015-06-18 typical rf performance (data taken in production test fixture) 12 13 14 15 16 17 18 30 32 34 36 38 40 42 44 46 48 gain (db) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 300 ma, t case = 25 c, 300 s pulse width, 12% duty cycle 1200 mhz 1300 mhz 1400 mhz a127002ev_g1 - 2 gain 50 55 60 65 70 14 15 16 17 18 1150 1200 1250 1300 1350 1400 1450 drain efficiency (%) gain (db) frequency (mhz) pulsed rf performance v dd = 50 v, i dq = 300 ma, p out = 700 w, 300 s pulse width, 12% duty cycle a127002ev_g1 - 3 efficiency gain 0.0 0.1 0.2 0.3 0.4 - 30 - 25 - 20 - 15 - 10 1150 1200 1250 1300 1350 1400 1450 power droop (db) irl (db) frequency (mhz) pulsed rf performance v dd = 50 v, i dq = 300 ma, p out = 700 w, 300 s pulse width, 12% duty cycle power droop a127002ev_g1 - 4 irl 15 25 35 45 55 65 15 25 35 45 55 65 30 32 34 36 38 40 42 44 46 48 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 300 ma, t case = 25 c, 300 s pulse width, 12% duty cycle 1200 mhz 1300 mhz 1400 mhz a127002ev_g1 - 1 output power efficiency
data sheet 5 of 11 rev. 03.1, 2015-06-18 ptva127002ev typical rf performance (cont.) 15 25 35 45 55 65 15 25 35 45 55 65 30 32 34 36 38 40 42 44 46 48 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 300 ma, t case = 25 c, 2 ms pulse width, 10% duty cycle 1200 mhz 1300 mhz 1400 mhz output power efficiency a127002ev_g2 - 1 13 14 15 16 17 18 30 32 34 36 38 40 42 44 46 48 gain (db) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 300 ma, t case = 25 c, 2 ms pulse width, 10% duty cycle 1200 mhz 1300 mhz 1400 mhz gain a127002ev_g2 - 2 50 55 60 65 70 14 15 16 17 18 1150 1200 1250 1300 1350 1400 1450 drain efficiency (%) gain (db) frequency (mhz) pulsed rf performance v dd = 50 v, i dq = 300 ma, p out = 700w, 2 ms pulse width, 10% duty cycle a127002ev_g2 - 3 gain efficiency 0.0 0.1 0.2 0.3 0.4 - 30 - 25 - 20 - 15 - 10 1150 1200 1250 1300 1350 1400 1450 power droop (db) irl (db) frequency (mhz) pulsed rf performance v dd = 50 v, i dq = 300 ma, p out = 700 w, 2 ms pulse width,10% duty cycle power droop a127002ev_g2 - 4 irl
ptva127002ev data sheet 6 of 11 rev. 03.1, 2015-06-18 typical rf performance (cont.) 15 25 35 45 55 65 15 25 35 45 55 65 30 32 34 36 38 40 42 44 46 48 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 300 ma, t case = 25 c, 16 ms pulse width, 20% duty cycle 1200 mhz 1300 mhz 1400 mhz output power efficiency a127002ev_g3 - 1 12 13 14 15 16 17 18 30 32 34 36 38 40 42 44 46 48 gain (db) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 300 ma, t case = 25 c, 16 ms pulse width, 20% duty cycle 1200 mhz 1300 mhz 1400 mhz a127002ev_g3 - 2 gain 50 55 60 65 70 14 15 16 17 18 1150 1200 1250 1300 1350 1400 1450 drain efficiency (%) gain (db) frequency (mhz) pulsed rf performance v dd = 50 v, i dq = 300 ma, p out = 700 w, 16 ms pulse width, 20% duty cycle gain efficiency a127002ev_g3 - 3 0.1 0.2 0.3 0.4 0.5 - 30 - 25 - 20 - 15 - 10 1150 1200 1250 1300 1350 1400 1450 power droop (db) irl (db) frequency (mhz) pulsed rfperformance v dd = 50 v, i dq = 300 ma, p out = 700 w, 16 ms pulse width, 20% duty cycle a127002ev_g3 - 4 irl power droop
data sheet 7 of 11 rev. 03.1, 2015-06-18 ptva127002ev broadband circuit impedance z source z load g s d load pull at max p out point C 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 150 ma freq [mhz] zl [w] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [w] 1200 1.91 C j2.04 41.40 56.40 436.52 15.00 53.80 1.30 C j2.03 1300 2.72 C j3.13 42.24 56.54 450.82 14.30 54.48 1.25 C j1.94 1400 4.83 C j1.46 41.66 56.31 427.56 14.65 53.27 1.03 C j1.94 load pull performance (single side) load pull at max g t point C 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 150 ma freq [mhz] zl [w] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [w] 1200 1.91 C j2.04 38.10 54.72 296.48 16.62 57.89 3.03 C j3.11 1300 2.72 C j3.13 38.84 54.83 304.09 15.99 62.54 3.22 C j1.63 1400 4.83 C j1.46 37.21 53.42 219.79 16.21 57.25 2.30 C j0.09 load pull at max effciency point C 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 150 ma freq [mhz] zl [w] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [w] 1200 1.91 C j2.04 39.60 55.80 380.19 16.20 60.71 2.22 C j2.43 1300 2.72 C j3.13 39.44 55.23 333.43 15.79 63.71 2.81 C j1.90 1400 4.83 C j1.46 39.39 55.19 330.37 15.80 62.26 2.40 C j1.45 z optimum C 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 150 ma freq [mhz] zl [w] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [w] 1200 1.91 C j2.04 39.18 55.58 361.41 16.40 60.50 2.41 C j2.50 1300 2.72 C j3.13 39.50 55.30 338.84 15.80 62.60 2.73 C j1.51 1400 4.83 C j1.46 40.00 55.60 363.08 15.60 60.70 1.86 C j1.37 freq [mhz] z source w z load w r jx r jx 1200 0.84 C1.27 0.90 C0.97 1300 0.97 C1.06 0.72 C0.47 1400 1.35 C1.12 0.63 0.03
ptva127002ev data sheet 8 of 11 rev. 03.1, 2015-06-18 reference circuit , 1200 C 1400 mhz reference circuit assembly diagram (not to scale) c102 rf_in rf_out v dd v dd p t v a 1 2 7 0 0 2 e v _ c d _ 1 1 - 0 7 - 2 0 1 3 c101 c103 c105 c 104 c106 c107 c109 r 102 r 101 c206 c207 r 201 r 802 r 801 r 803 r 804 r 806 c202 c 201 c210 c110 c111 c112 + + s 4 r 807 c805 s 5 s 6 r 805 c108 r 808 r 106 c804 r 103 c806 r 104 r 105 c802 c803 c801 c113 s 3 s 2 s 1 ptva 127002ev_in_03 c 205 c204 c203 ptva127002 ev_out_03 ro3010 , .025 (62) ro 3010 , .025 ( 62) c208 c211 c212 r 202 c209
data sheet 9 of 11 rev. 03.1, 2015-06-18 ptva127002ev reference circuit (cont.) reference circuit assembly dut ptva27002ev v1 test fixture part no. ltn/ptva127002ev v1 pcb rogers 3010, 0.635 mm [0.025] thick, 2 oz. copper, r = 10.2, ? = 1930 C 1990 mhz find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower components information component description suggested manufacturer p/n input c101, c102, c108, c109 capacitor, 39 pf atc atc100b390kw500xb c103, c110 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c104, c107 capacitor, 1 f tdk corporation c4532x7r2a105m230ka c105, c112, c113 capacitor, 56 pf atc atc100b560jw500xb c106 capacitor, 3.9 pf atc atc800a3r9cw250 c111 capacitor, 6.2 pf atc atc100a6r2cw150xb c801, c802, c803, c804, c805, c806 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k r101, r105 resistor, 1000 w panasonic electronic components erj-8geyj102v r102, r106 resistor, 5.6 w panasonic electronic components erj-8geyj5r6v r103, r104, r804, r808 resistor, 10 w panasonic electronic components erj-8geyj100v r801, r805 resistor, 2000 w panasonic electronic components erj-8geyj202v r802, r807 resistor, 1300 w panasonic electronic components erj-3geyj132v r803, r806 resistor, 1200 w panasonic electronic components erj-3geyj122v s1, s4 transistor infneon technologies bcp56 s2, s5 voltage regulator national semiconductor lm7805 s3, s6 potentiometer, 2k w bourns inc. 3224w-1-202e output c201, c210 capacitor, 1 f tdk corporation c4532x7r2a105m230ka c202 capacitor, 2.2 f atc atc100b2r2cw500 c203 capacitor, 100 f cornell dubilier electronics (cde) sk101m100st c204 capacitor, 22 f cornell dubilier electronics (cde) sek220m100st c205 capacitor, 10 f cornell dubilier electronics (cde) sek100m100st c206, c212 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c207, c211 capacitor, 39 pf atc atc100b390kw500 c208 capacitor, 6800 f panasonic electronic components eco-s2ap682ea c209 capacitor, 56 pf atc atc100b560jw500 r201, r202 resistor, 5.6 w panasonic electronic components erj-8rqj5r6v
ptva127002ev data sheet 10 of 11 rev. 03.1, 2015-06-18 package outline specifications package h-36275-4 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower s 35 . 56 [1. 400 ] 4x 11 . 68 [. 460 ] c l d1 g1 d2 2 x 45 x 1. 19 [45 x . 047 ] 10 . 16 [. 400 ] 9. 144 [. 360 ] c l c 2 x 2 . 03 [. 080 ] ref 13. 72 [. 540 ] 16 . 612 0.500 [. 654 . 020 ] 2x r1. 59 [r . 062 ] 3. 23 0. 51 [. 127 . 020 ] 8x r0. 51 +0. 13 - 0. 51 [ r . 020 +. 005 - . 020 ] g2 l c l 41. 15 [1 . 620 ] 31. 242 0. 280 [1. 230 . 011 ] 1. 63 [. 064 ] 2. 13 [. 084 ] sph [ c l c l c l 4. 58 +0. 25 - 0. 13 . 180 +. 010 - . 005 ] h - 36275 - 4 _po _01 _10 - 22 - 2012 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.127 0.051 mm [0.005 0.002 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
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